complementary npn-pnp silicon power bipolar transistor the mjl3281a and mjl1302a are powerbase power transistors for high power audio, disk head positioners and other linear applications. ? designed for 100 w audio frequency ? gain complementary: gain linearity from 100 ma to 7 a high gain e 60 to 175 h fe = 45 (min) @ i c = 8 a ? low harmonic distortion ? high safe operation area e 1 a/100 v @ 1 second ? high f t e 30 mhz typical maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ceo 200 vdc collectorbase voltage v cbo 200 vdc emitterbase voltage v ebo 7 vdc collectoremitter voltage 1.5 v v cex 200 vdc collector current e continuous collector current e peak (1) i c 15 25 adc base current e continuous i b 1.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 200 1.43 watts w/ c operating and storage junction temperature range t j , t stg 65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 0.7 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter sustaining voltage (i c = 100 madc, i b = 0) v ceo(sus) 200 e e vdc emitterbase voltage (i e = 100 adc, i c = 0) v ebo 7 e e vdc (1) pulse test: pulse width = 5 ms, duty cycle < 10%. (continued) preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 march, 2002 rev. 4 1 publication order number: mjl3281a/d 15 ampere complementary silicon power transistors 200 volts 200 watts mjl3281a mjl1302a * *on semiconductor preferred device npn pnp * case 340g02, style 2 to264
mjl3281a mjl1302a http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector cutoff current (v cb = 200 vdc, i e = 0) i cbo e e 50 m adc emitter cutoff current (v eb = 5 vdc, i c = 0) i ebo e e 5 m adc emitter cutoff current (v eb = 7 vdc, i c = 0) i ebo e e 25 m adc second breakdown second breakdown collector with base forward biased (v ce = 50 vdc, t = 1 s (nonrepetitive) (v ce = 100 vdc, t = 1 s (nonrepetitive) i s/b 4 1 e e e e adc on characteristics dc current gain (i c = 100 madc, v ce = 5 vdc) (i c = 1 adc, v ce = 5 vdc) (i c = 3 adc, v ce = 5 vdc) (i c = 5 adc, v ce = 5 vdc) (i c = 7 adc, v ce = 5 vdc) (i c = 8 adc, v ce = 5 vdc) (i c = 15 adc, v ce = 5 vdc) h fe 60 60 60 60 60 45 12 125 e e e 115 e 35 175 175 175 175 175 e e collectoremitter saturation voltage (i c = 10 adc, i b = 1 adc) v ce(sat) e e 3 vdc dynamic characteristics currentgain e bandwidth product (i c = 1 adc, v ce = 5 vdc, f test = 1 mhz) f t e 30 e mhz output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) c ob e e 600 pf i c , collector current (amps) figure 1. typical current gain bandwidth product figure 2. typical current gain bandwidth product f, current bandwidth product (mhz) t pnp mjl1302a f, current bandwidth product (mhz) t npn mjl3281a i c , collector current (amps) 0.1 1.0 10 50 40 30 20 10 0 60 40 30 0 10 0.1 1.0 10 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 20 v ce = 10 v 5 v t j = 25 c f test = 1 mhz 50
mjl3281a mjl1302a http://onsemi.com 3 figure 3. dc current gain, v ce = 20 v figure 4. dc current gain, v ce = 20 v figure 5. dc current gain, v ce = 5 v figure 6. dc current gain, v ce = 5 v h fe , dc current gain i c , collector current (amps) i c , collector current (amps) h fe , dc current gain h fe , dc current gain i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) figure 7. typical output characteristics i c , collector current (a) v ce , collector-emitter voltage (volts) figure 8. typical output characteristics i c , collector current (a) pnp mjl1302a npn mjl3281a h fe , dc current gain typical characteristics pnp mjl1302a pnp mjl1302a npn mjl3281a npn mjl3281a 45 25 20 15 10 5.0 0 5.0 010152025 45 25 20 15 10 0 5.0 010152025 5.0 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 30 40 35 1.5 a 1 a 0.5 a i b = 2 a t j = 25 c 40 35 30 1000 100 10 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 20 v 100 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v 1000 100 10 100 10 1.0 0.1 t j = 100 c 25 c -25 c v ce = 5 v
mjl3281a mjl1302a http://onsemi.com 4 figure 9. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 10. typical saturation voltages i c , collector current (amps) saturation voltage (volts) figure 11. typical baseemitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 12. typical baseemitter voltage i c , collector current (amps) v be(on) , base-emitter voltage (volts) figure 13. active region safe operating area v ce , collector-emitter voltage (volts) i c , collector current (amps) there are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t j(pk) = 150 c; t c is vari- able depending on conditions. at high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break- down. pnp mjl1302a npn mjl3281a typical characteristics pnp mjl1302a npn mjl3281a 3.0 2.5 2.0 1.5 1.0 0.5 0 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0 100 10 1.0 0.1 0.5 100 10 1.0 0.1 100 10 1.0 1000 t j = 25 c i c /i b = 10 v be(sat) v ce(sat) t j = 25 c i c /i b = 10 v be(sat) v ce(sat) 10 ms 50 ms 250 ms 1 sec 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed) 10 1.0 0.1 100 10 1.0 0.1 t j = 25 c v ce = 20 v (solid) v ce = 5 v (dashed)
mjl3281a mjl1302a http://onsemi.com 5 figure 14. mjl1302a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) figure 15. mjl3281a typical capacitance v r , reverse voltage (volts) c, capacitance (pf) 10000 1000 100 100 10 1.0 0.1 10000 1000 100 100 10 1.0 0.1 t j = 25 c f test = 1 mhz c ib c ob t j = 25 c f test = 1 mhz c ib c ob pnp mjl1302a npn mjl3281a typical characteristics
mjl3281a mjl1302a http://onsemi.com 6 package dimensions case 340g02 issue h to3pbl (to264) dim a min max min max inches 28.0 29.0 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.0 11.4 0.433 0.449 n 3.95 4.75 0.156 0.187 p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.15 2.35 0.085 0.093 u 6.1 6.5 0.240 0.256 w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m yq s 123 b q y t scale 1:2
mjl3281a mjl1302a http://onsemi.com 7 notes
mjl3281a mjl1302a http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjl3281a/d powerbase is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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